Search Results for: Electromigration And Electronic Device Degradation

Addresses electromigration failure modes in electronics covering both theory and experiments. Reviews silicon and GaAs technologies. Various rate controlling details are summarized including an investigation of temperature dependence. Concludes with a discussion regarding current status and future plans for electromigration resistant advanced metallization systems for VLSI.

MICROELECTRONIC INTERCONNECTIONS AND MICROASSEMBL Y WORKSHOP 18-21 May 1996, Prague, Czech Republic Conference Organizers: George Harman, NIST (USA) and Pavel Mach (Czech Republic) Summary of the Technical Program Thirty two presentations were given in eight technical sessions at the Workshop. A list of these sessions and their chairpersons is attached

Various factors affect the performance of electrical contacts, including tribological, mechanical, electrical, and materials aspects. Although these behaviors have been studied for many years, they are not widely used or understood in practice. Combining approaches used across the globe, Electrical Contacts: Fundamentals, Applications, and Technology integrates advances in research and

Books about Compound Semiconductor Power Transistors and

Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in